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    SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BGA318 Q62702-G0043
Description From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器(级0瓦,增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫)
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

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    Q62702-G0042 BGA312

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-G0042 BGA312
Description Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
From old datasheet system

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    BGA312

Siemens Semiconductor Group
Part No. BGA312
Description Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)

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    BGA318

Siemens Semiconductor Group
Part No. BGA318
Description Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)

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    Q62702-G0041 BGA310

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-G0041 BGA310
Description Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system

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    BGA310

Siemens Semiconductor Group
Part No. BGA310
Description Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)

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    TY Semiconductor Co., Ltd
Part No. KTS1C1S250
Description typical RDS(on) (N-Channel)=0.9 typical RDS(on) (N-Channel)=2.1 Gate-source zener diode

File Size 1,467.96K  /  3 Page

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    TL802A-1 TL801

List of Unclassifed Manufacturers
List of Unclassifed Manufac...
Part No. TL802A-1 TL801
Description typical INSTALLATION DIAGRAM
typical INSTALLATIION DIAGRAM

File Size 107.14K  /  1 Page

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    VTD175 VTD170XS VTD170 VTD175L VTD175S VTD175XL VTD200S VTD200 VTD240 VTD210 VTD210L VTD210LS VTD210S VTD210SS VTD210SD

Littelfuse, Inc.
Part No. VTD175 VTD170XS VTD170 VTD175L VTD175S VTD175XL VTD200S VTD200 VTD240 VTD210 VTD210L VTD210LS VTD210S VTD210SS VTD210SD VTD175D
Description 85 ∑C to -40 ∑C 10 times % typical resistance change
85 ∑C to -40 ∑C 10 times 【5 % typical resistance change
POLYFUSE RESETTABLE FUSES
85 °C to -40 °C 10 times ±5 % typical resistance change

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    MCP6002 MCP6002EP MCP6002ESN MCP6004 MCP6004E MCP6004ELT MCP6004EMS MCP6004EOT MCP6004EP MCP6004ESL MCP6004ESN MCP6004ES

Microchip Technology Inc
MICROCHIP[Microchip Technology]
Part No. MCP6002 MCP6002EP MCP6002ESN MCP6004 MCP6004E MCP6004ELT MCP6004EMS MCP6004EOT MCP6004EP MCP6004ESL MCP6004ESN MCP6004EST MCP6004I MCP6004ILT MCP6004IMS MCP6004IOT MCP6004IP MCP6004ISL MCP6004ISN MCP6004IST MCP6001 MCP6001E MCP6001ELT MCP6001EMS MCP6001EOT MCP6001EP MCP6001ESL MCP6001ESN MCP6001EST MCP6001I MCP6001ILT MCP6001IMS MCP6001IOT MCP6001IP MCP6001ISL MCP6001ISN MCP6001IST MCP6002E MCP6002ELT MCP6002EMS MCP6002EOT MCP6002ESL MCP6002EST MCP6002I MCP6002ILT MCP6002IMS MCP6002IOT MCP6002IP MICROCHIP MCP6002ISL MCP6002ISN MCP6002IST
Description The MCP6002 is a dual general purpose op amp offering rail to rail input & output over the 1.8 to 5.5V operating range. This amplifier has a typical GBWP of 1 MHz with typical quiescent current of 100 microamperes. The MCP6002 is avail
Operational Amplifier - Datasheet Reference
1 MHz Bandwidth Low Power Op Amp
The MCP6001 is a single general purpose op amp offering rail to rail input & output over the 1.8 to 5.5V operating range. This amplifier has a typical GBWP of 1 MHz with typical quiescent current of 100 microamperes. The MCP6001 is ava

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