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eseries Datasheet PDF File

For eseries Found Datasheets File :: 21 Search Time::1.625ms
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					Carling Technologies
Part No.	EA3-B0-26-625-1DA-EB EA1-B0-14-630-32E-BC EA3-B0-66-490-11A-GB EA2-B0-16-680-2DA-BC EA3-B0-22-625-12A-DC EA2-B0-16-650-2DA-BC EA1-B0-12-650-21A-BB EA3-X0-02-564-12A-BB EA1-B0-24-450-12A-CC
OCR Text	...kers and grounded obstructions. eseries circuit breakers must be mounted on a vertical surface. Front connected E-Series circuit breakers are supplied with box type pressure connectors that accept copper or aluminum conductors as follows: 1...
Description
File Size	1,440.46K / 8 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGP11N60E-D
OCR Text	...n at high frequencies. this new eseries introduces an energy efficient, esd protected, and short circuit rugged device. ? industry standard to220 package ? high speed: e off = 60 j/a typical at 125 c ? high voltage short circuit capabi...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	107.78K / 6 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGP14N60E-D
OCR Text	...n at high frequencies. this new eseries introduces an energy efficient, esd protected, and short circuit rugged device. ? industry standard to220 package ? high speed: e off = 63 j/a typical at 125 c ? high voltage short circuit capabi...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	107.80K / 6 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGP21N60E-D
OCR Text	...n at high frequencies. this new eseries introduces an energy efficient, esd protected, and short circuit rugged device. ? industry standard to220 package ? high speed: e off = 65 j/a typical at 125 c ? high voltage short circuit capabi...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	109.57K / 6 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGP4N60E-D
OCR Text	...n at high frequencies. this new eseries introduces an energy efficient, esd protected, and short circuit rugged device. ? industry standard to220 package ? high speed: e off = 60 j/a typical at 125 c ? high voltage short circuit capabi...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	108.35K / 6 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGP7N60E-D
OCR Text	...n at high frequencies. this new eseries introduces an energy efficient, esd protected, and short circuit rugged device. ? industry standard to220 package ? high speed: e off = 70 j/a typical at 125 c ? high voltage short circuit capabi...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	106.31K / 6 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGP11N60ED-D
OCR Text	...ssembly time and cost. this new eseries introduces an energy efficient, esd protected, and rugged short circuit device. ? industry standard to220 package ? high speed: e off = 60 j per amp typical at 125 c ? high voltage short circui...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
File Size	122.69K / 6 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGP4N60ED-D
OCR Text	...ssembly time and cost. this new eseries introduces an energy efficient, esd protected and short circuit rugged device. ? industry standard to220 package ? high speed: e off = 60 j/a typical at 125 c ? high voltage short circuit capabil...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
File Size	122.50K / 6 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGP7N60ED-D
OCR Text	...ssembly time and cost. this new eseries introduces an energy efficient, esd protected, and short circuit rugged device. ? industry standard to220 package ? high speed: e off = 70 j/a typical at 125 c ? high voltage short circuit capabi...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
File Size	120.86K / 6 Page	View it Online	Download Datasheet

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Price and Availability

Price & Availability of eseries

Part #	Manufacturer	Description	Price	BuyNow Qty.
ESERIESUSBCBL (ALTERNATE: ESERIESUSBCBL) 72813127	Eaton Cutler-Hammer	E-SERIES MINI USB PROGRAMMING CABLE, 6 FOOT \| Eaton - Cutler Hammer ESERIESUSBCBL	1: USD44.15 5: USD41.94 10: USD41.06 25: USD40.18 50: USD38.85	1

TTI

Part #	Manufacturer	Description	Price	BuyNow Qty.
SIHH068N60E-T1-GE3 SIHH068N60E-T1-GE3	Vishay Intertechnologies	MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8	3000: USD4.4	6000
SIHG11N80AE-GE3 SIHG11N80AE-GE3	Vishay Intertechnologies	MOSFETs 800V N-CH MOSFET E-SERIES PWR	25: USD1.81 100: USD1.53 250: USD1.49 500: USD1.3 1000: USD1.21 2000: USD1.18 5000: USD1.14	500
SIHA180N60E-GE3 SIHA180N60E-GE3	Vishay Intertechnologies	MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK	1000: USD1.59	2000
SIHP180N60E-GE3 SIHP180N60E-GE3	Vishay Intertechnologies	MOSFETs 600V Vds 30V Vgs TO-220AB	1000: USD1.99 2000: USD1.95	1000
SIHD1K4N60E-GE3 SIHD1K4N60E-GE3	Vishay Intertechnologies	MOSFETs 600V Vds 30V Vgs DPAK (TO-252)	3000: USD0.442 6000: USD0.428 9000: USD0.419	9000

Sager

Part #	Manufacturer	Description	Price	BuyNow Qty.
DEMO-HESERIES 000000000003374007	IDEC Corporation	IDEC Corporation		0

Maritex

Part #	Manufacturer	Description	Price	BuyNow Qty.
BLUETOOTH® EVB –BLE SERIES BLU-EVK-U1623	GlobalTop Technology	GlobalTop Bluetooth Orchid 1 BCS-U1623 EV-Kit for SPP	1: USD101.036	1

Perfect Parts Corporation

Part #	Manufacturer	Description	Price	BuyNow Qty.
RM73B1E SERIES(04025%)	KOA Speer Electronics Inc			1

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