...pation per IGBT
Ptot
500
w + 150 -55 ... + 150 0.25 0.75 4000 20 11 F 55 / 150 / 56 Vac mm K/w C
TC = 25 C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test v...
Description
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
... N*m)
Units
V A
s V VRMS w
C
Thermal Resistance
Parameter
RJC (IGBT) RJC (DIODE) RCS (MODULE) wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, gr...
... Unit Vdc Vdc Vdc Adc Apk watts w/C C
ms
C/w
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw (1) Pulse width is limited by maximum junction temperature.
C
Designer'...
Description
insulated Gate Bipolar Transistor with Anti-Parallel Diode
...0 300
Units V V A A A A A us w w C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal...
... +150 300
Units V V A A A us w w C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junc...
... +150 300
Units V V A A A us w w C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junc...
...o +150 300
Units V V A A A s w w C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junc...
...
Unit Vdc Vdc Vdc Adc Apk watts w/C C
ms
C/w
C
Designer'sTM is a trademark of Motorola, Inc.
REV 1
(c) Motorola IGBT Device Motorola, Inc. 1998
Data
1
MGP7N60ED
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise...
Description
insulated Gate Bipolar Transistor withr Anti-Parallel Diode IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS From old datasheet system
...
Unit Vdc Vdc Vdc Adc Apk watts w/C C
ms
C/w C
Designer's is a trademark of Motorola, Inc.
(c) Motorola IGBT Device Motorola, Inc. 1997
Data
1
MGP7N60E
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Charac...