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  w insulated Datasheet PDF File

For w insulated Found Datasheets File :: 6294    Search Time::1.922ms    
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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...pation per IGBT Ptot 500 w + 150 -55 ... + 150 0.25 0.75 4000 20 11 F 55 / 150 / 56 Vac mm K/w C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test v...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ... N*m) Units V A s V VRMS w C Thermal Resistance Parameter RJC (IGBT) RJC (DIODE) RCS (MODULE) wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, gr...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    MGP20N60U

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MGP20N60U
OCR Text ... Unit Vdc Vdc Vdc Adc Apk watts w/C C C/w C (c) Motorola IGBT Device Motorola, Inc. 1997 Data 1 MGP20N60U ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-to-Emitter Bre...
Description insulated Gate Bipolar Transistor 31 A, 600 V, N-CHANNEL IGBT, TO-220AB

File Size 116.62K  /  6 Page

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    MGW20N60D

MOTOROLA INC
MOTOROLA[Motorola, Inc]
Part No. MGw20N60D
OCR Text ... Unit Vdc Vdc Vdc Adc Apk watts w/C C ms C/w Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw (1) Pulse width is limited by maximum junction temperature. C Designer'...
Description insulated Gate Bipolar Transistor with Anti-Parallel Diode

File Size 245.88K  /  6 Page

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    SGH20N60RUFD SGH20N60RUFDTU

FAIRCHILD[Fairchild Semiconductor]
Part No. SGH20N60RUFD SGH20N60RUFDTU
OCR Text ...0 300 Units V V A A A A A us w w C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal...
Description Discrete, Short Circuit Rated IGBT with Diode

File Size 624.81K  /  8 Page

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    SGH20N60RUF

FAIRCHILD[Fairchild Semiconductor]
Part No. SGH20N60RUF
OCR Text ... +150 300 Units V V A A A us w w C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junc...
Description Short Circuit Rated IGBT

File Size 538.88K  /  7 Page

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    SGP20N60 SGP20N60RUF

http://
FAIRCHILD[Fairchild Semiconductor]
Part No. SGP20N60 SGP20N60RUF
OCR Text ... +150 300 Units V V A A A us w w C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junc...
Description Short Circuit Rated IGBT

File Size 537.60K  /  7 Page

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    SGW20N60 SGW20N60RUF

FAIRCHILD[Fairchild Semiconductor]
Part No. SGw20N60 SGw20N60RUF
OCR Text ...o +150 300 Units V V A A A s w w C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junc...
Description    Short Circuit Rated IGBT

File Size 536.49K  /  7 Page

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    MGP7N60ED MGP7N60ED_D ON1877 ON1876

ONSEMI[ON Semiconductor]
Part No. MGP7N60ED MGP7N60ED_D ON1877 ON1876
OCR Text ... Unit Vdc Vdc Vdc Adc Apk watts w/C C ms C/w C Designer'sTM is a trademark of Motorola, Inc. REV 1 (c) Motorola IGBT Device Motorola, Inc. 1998 Data 1 MGP7N60ED ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise...
Description insulated Gate Bipolar Transistor withr Anti-Parallel Diode
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system

File Size 140.16K  /  6 Page

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    MGP7N60E

MOTOROLA[Motorola, Inc]
Part No. MGP7N60E
OCR Text ... Unit Vdc Vdc Vdc Adc Apk watts w/C C ms C/w C Designer's is a trademark of Motorola, Inc. (c) Motorola IGBT Device Motorola, Inc. 1997 Data 1 MGP7N60E ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Charac...
Description insulated Gate Bipolar Transistor

File Size 118.28K  /  6 Page

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For w insulated Found Datasheets File :: 6294    Search Time::1.922ms    
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