| PART |
Description |
Maker |
| C67076-A1053-A2 BSM191F |
SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode) 28 A, 1000 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
SIMOPAC ? Module
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| BSM101AR C67076-S1018-A2 BSM101 |
From old datasheet system
SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块（单开关电源模块N通道增强模式
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 50 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| WS128K32N-35H1M WS128K32N-35H1C WS128K32N-17H1C WS |
35ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
15ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
55ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
45ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????5ns锛?
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????0ns锛?
x32 SRAM Module X32号的SRAM模块
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时7ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时0ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时5ns
17ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
|
NXP Semiconductors N.V.
White Electronic Designs Corporation
|
| S-AV17 E002849 |
RF POWER AMPLIFIER MODULE(HAM, VHF 50W FM RF POWER AMPLIFIER MODULE) 射频功率放大器模块（火腿，甚高频50瓦调频射频功率放大器模块
RF POWER AMPLIFIER MODULE(HAM/ VHF 50W FM RF POWER AMPLIFIER MODULE)
VHF 50W FM RF POWER AMPLIFIER MODULE HAM Application
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| BSM50GD120DN2 C67076-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（功率模相全桥包括快速滑行二极管
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MP4015 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
TOSHIBA Power Transistor Module
|
TOSHIBA[Toshiba Semiconductor]
|
| APTGF90DA60T3AG |
Boost chopper NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| OL6204N-50 OL6204N-50AP OL6204N-50BP OL6204N-BP OL |
From old datasheet system
1.6 um High-Power DIP Module with 9mm Profile
1.6 レm High-Power DIP Module with 9mm Profile
1.6 m High-Power DIP Module with 9mm Profile
1.6 μm High-Power DIP Module with 9mm Profile
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT02; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle
|
OKI electronic eomponets
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| APTM120UM70F-ALN |
171 A, 1200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET MODULE-5
Single switch MOSFET Power Module
|
Amphenol, Corp.
ADPOW[Advanced Power Technology]
|
| S-AV40 |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| 1DI300MN-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 300A I(C)
Power Transistor Module
|
Fuji Electric
|
