| PART |
Description |
Maker |
| BC548ABC BC547ABC ON0152 BC546 BC548C BC548 BC546B |
Amplifier Transistor NPN
From old datasheet system
CASE 29-04, STYLE 17 TO-2 (TO-226AA)
Amplifier Transistors(NPN Silicon) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
| MSC2295BT1 MSC2295-BT1 MSC2295-CT1 ON2374 |
NPN RF Amplifier Transistors Surface Mount Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN RF Amplifier Transistors Surface Mount UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
CASE 318D3, STYLE 1 SC9
From old datasheet system
|
MOTOROLA INC
Motorola Mobility Holdings, Inc.
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MPSA05 |
General Purpose Transistor
EPITAXIAL PLANAR NPN TRANSISTOR (DRIVER STAGE AMPLIFIER, VOLTAGE AMPLIFIER)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| BSR14 BSR14-MR BSR14D87Z |
800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
TRANSISTOR BSR14 MINIREEL 500PCS
NPN General Purpose Amplifier
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 2SC3583-R35 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Renesas Electronics Corporation
|
| KSH31 KSH31C KSH31CTF KSH31TF |
NPN Epitaxial Silicon Transistor
General Purpose Amplifier Low Speed Switching Applications 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| 2SC3807C |
2 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
|
NEC[NEC]
NEC Corp.
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| BD525 BD529 BD527 BD525-5 BD529-5 |
NPN silicon annular amplifier transistor. 10 W, 100 V.
NPN silicon annular amplifier transistor. 10 W, 60 V.
NPN SILICON AMPLIFIER TRANSISTORS
|
MOTOROLA[Motorola, Inc]
ETC
|
