| PART |
Description |
Maker |
| 5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 5082-2271 50822271 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| CBS10S30 |
Schottky Barrier Diode Silicon Epitaxial
Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
| 1SS286 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
Schottky Barrier Diodes for Detection and Mixer
|
HITACHI[Hitachi Semiconductor]
|
| SDMG0340LA SDMG0340LA-7 SDMG0340L SDMG0340L-7 SDMG |
SURFACE MOUNT SCHOTTKY BARRIER DIODE
DIR-COUPLER 18.5DB 1805-1880MHZ THIN-FILM SMD-0402 LGA-SN90/PB10 T&R
SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.03 A, 40 V, SILICON, SIGNAL DIODE
|
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
| SDM40E20L08 SDM40E20LA-7 SDM40E20LS-7-F SDM40E20LC |
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE
DIODE SCHOTTKY 20V 300MW SOT23
0.4 A, 20 V, 2 ELEMENT, SILICON, SIGNAL DIODE
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE
|
Diodes Incorporated
Diodes Inc.
|
| ABP9001-868 ABP9002-806 ABP9002-700 ABM3001-868 AB |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
Vishay Beyschlag
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| SDM100K30L-7 SDM100K30L08 |
DIODE SCHOTTKY 30V 1.0A SOD323 1 A, 30 V, SILICON, SIGNAL DIODE
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
|
Diodes, Inc.
Diodes Incorporated
|
| HSCH-3486 HSCH3486 |
ZERO BIAS SCHOTTKY DIODE SILICON, ZERO BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor
ASI
|
| SB30-45-25 SB30-40-258RM SB30-40-258M SB30-40-258A |
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Anode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阳极连) 双肖特基二极管在TO258金属封装，高可靠性的应用（共阳极）（双肖特基势垒二极管（高可靠性应用，TO258金属封装，共阳极连接））
DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-258AA
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Series Connection)(双肖特基势垒二极HI-REL应用,TO258金属封装,串行连接))
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Cathode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阴极连)
|
SEMELAB LTD
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
