| PART |
Description |
Maker |
| PDM31034SA10SO PDM31034SA10SOATY PDM31034SA10SOATR |
1 megabit 3.3V static RAM 128K x 8-bit revolutionary pinout
|
PARADIGM
|
| IS63LV1024-8KL IS63LV1024L-10HI IS63LV1024L-12B IS |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
|
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
|
| IDT71124 IDT7112415YGI8 IDT7112420YGI8 IDT71124S12 |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Equal access and cycle times
|
Integrated Device Techn...
|
| IS63LV1024 IS63LV1024L-12T IS63LV1024L-8TI IS63LV1 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 8 ns, PDSO32
TRANS PNP W/RES 50HFE NS-B1 128K X 8 STANDARD SRAM, 12 ns, PBGA36
TRANS PNP W/RES 30HFE NS-B1 128K X 8 STANDARD SRAM, 10 ns, PDSO32
TRANS PNP W/RES 60HFE NS-B1
CAP CERAMIC 330PF 50V NP0 0805
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| GVT72256A16 |
REVOLUTIONARY PINOUT 256K X 16
|
Galvantech
|
| AS5C512K8F-15 AS5C512K8F-15L_883C AS5C512K8F-17 AS |
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
|
ETC
AUSTIN[Austin Semiconductor]
|
| 71V12415PHGI8 71V12412PHGI8 71V12412TYGI8 |
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power and Ground Pinout
|
Integrated Device Techn...
|
| AS7C31024A-10JC AS7C31024A-10JI AS7C31024A-10TC AS |
3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)(3.3V 128KX8 CMOS 静态RAM（改进的引脚
5V/3.3V 128K x 8 CMOS SRAM (Evolutionary Pinout)
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)
|
Alliance Semiconductor Corporation
ETC
|
| K6R1008V1B-B-L K6R1008V1B-C10 K6R1008V1B-C8 K6R100 |
128K X 8 STANDARD SRAM, 10 ns, PDSO32
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges 128Kx8位高速静态RAM.3V的工作），革命销出。在商用和工业温度范围运
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| LH532000B LH532000BT |
CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM
LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
Sharp Electronics Corp.
|
| 28C011TRT1FS 28C011TRPFS 28C011TRPFS-20 28C011TRPF |
1 Megabit (128K x 8-Bit) EEPROM 1兆位128K的8位）的EEPROM
1 Megabit (128K x 8-Bit) EEPROM 1兆位28K的8位）的EEPROM
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
CONNECTOR ACCESSORY
POT 100K OHM THUMBWHEEL CERM ST
|
http://
NXP Semiconductors N.V.
Maxwell Technologies, Inc
|
