PART |
Description |
Maker |
GN1L4L GN1L4L-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC[NEC]
|
GA1A4P GA1A4P-T1 GA1A4P-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC
|
GA1A4Z GA1A4Z-T2 GA1A4ZL69-T1 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五(巴西)总裁| 100mA的一(c)|的SOT - 323 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR SUPER MINIMOLD PACKAGE-3 MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR Hybrid transistor
|
NEC, Corp.
|
BB1 BB1A4A BB1A4M BB1L3N BB1A3M BB1F3P BB1J3P BB1L |
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching Hybrid transistor
|
NEC Corp. NEC[NEC]
|
STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 } Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics STMicroelectronics
|
CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO 25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B 25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238 PNP PLASTIC POWER TRANSISTORS Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes
|
Continental Device India Limited
|
CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
AP1L3N AP1A3M AP1A4A AP1A4M AP1F3P AP1J3P AP1L2Q A |
on-chip resistor NPN silicon epitaxial transistor Hybrid transistor
|
NEC Corp. NEC[NEC]
|
AA1F4Z AA1F4Z-T/JD AA1F4Z-T/JM AA1F4Z/JM |
Hybrid transistor On-chip resistor NPN silicon epitaxial transistor For mid-speed switching
|
NEC[NEC] NEC Corp.
|
FP1A3M FP1F3P FP1L3N FP1J3P FP1L2Q FP1A4M FP1A4A F |
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching Hybrid transistor
|
NEC Corp. NEC[NEC]
|
AA1A3Q AA1A3Q-T/JD AA1A3Q-T/JM AA1A3Q/JD AA1A3Q/JM |
Hybrid transistor On-chip resistor NPN silicon epitaxial transistor For mid-speed switching
|
NEC Corp.
|