| PART |
Description |
Maker |
| SLD6162RLI |
Two-wavelength Laser Diode
|
SONY[Sony Corporation]
|
| QL78D6S-A QL78D6S-C QL78D6S-B QL78D6S-ABC |
AlGaAs Laser Diode
lasing wavelength
|
Roithner LaserTechnik GmbH
Roithner LaserTechnik G...
|
| ADL-63302TL |
AlGaAlP laser diode Peak Wavelength 638nm Single Transverse/Longitudinal Mode Optical Ouput Power 30mW
|
Roithner LaserTechnik GmbH
|
| NX8567SAM525-CC NX8567SAS425-CC NX8567SAS525-CC NX |
EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 240, 360, 600 km DWDM APPLICATIONS EA调制器和波长.5千兆监测综合InGaAsP多量子阱激光器激光二极管模块/ s的超长到达的2406000公里的DWDM应用
EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 240, 360, 600 km DWDM APPLICATIONS EA调制器和波长2.5千兆监测综合InGaAsP多量子阱激光器激光二极管模块/ s的超长到达的2406000公里的DWDM应用
|
California Eastern Laboratories, Inc.
|
| SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE
798 nm, LASER DIODE
High Power Density 1W Laser Diode
|
SONY
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
| NX6511GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX8349TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
