PART |
Description |
Maker |
S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
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Hamamatsu Photonics K.K.
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S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
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Hamamatsu Photonics
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MGF1952A |
Microwave Power MES FET (Leadless Ceramic Package)
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Mitsubishi Electric Semiconductor
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STP4N80K5 STD4N80K5 STF4N80K5 STU4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
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ST Microelectronics
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STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics STMicroelectronics
|
BAS116 |
Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us
|
TY Semiconductor Co., Ltd
|
STU6N65K3 STF6N65K3 STFI6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
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STMicroelectronics ST Microelectronics
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IP78M12A-LCC4 IP78M12-LCC4 IP78M15A-LCC4 IP78M15-L |
0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,5V绋冲????剁?琛ㄨ创灏??)) Voltage Regulator 电压调节 0.5 AMP POSITIVE VOLTAGE REGULATOR IN A CERAMIC SURFACE MOUNT PACKAGE 15 V FIXED POSITIVE REGULATOR, CQCC18 0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,15V稳压陶瓷表贴封装)) 0.5安培正电压稳压器在陶瓷表面贴装封装(0.5甲,15V的稳压器(陶瓷表贴封装) 0.5 AMP POSITIVE VOLTAGE REGULATOR IN A CERAMIC SURFACE MOUNT PACKAGE 5 V FIXED POSITIVE REGULATOR, CQCC18 Power Resistor; Series:TWW; Resistance:15ohm; Resistance Tolerance: /- 5 %; Power Rating:5W; Voltage Rating:350V; Temperature Coefficient:400ppm/ C 0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,12V稳压陶瓷表贴封装)) 0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,5V稳压陶瓷表贴封装)) 0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,12V绋冲????剁?琛ㄨ创灏??))
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Honeywell International, Inc. TT electronics Semelab, Ltd. TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB] SEMELAB LTD
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HM628512BI HM628512BLFPI-7 HM628512BLFPI-8 HM62851 |
4 M SRAM (512-kword x 8-bit) Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V; Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V; Octal Buffers And Line Drivers With 3-State Outputs 20-CDIP -55 to 125 Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V; Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R<sub>1</sub> (typ): 47.0 kOhm; R<sub>2</sub>: 47.0 k?; h<sub>FE</sub> (min): 70.0; V<sub>i (on)</sub> (min): 1.0 2mA / 0.3V;
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http:// HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
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STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
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ST Microelectronics STMicroelectronics
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CY7C1362B-166AI CY7C1362B-166AC CY7C1360B-200BGC C |
CONNECTOR ACCESSORY 256K X 36 CACHE SRAM, 3.5 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S) MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (L)- (2)
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
SLD-1083CZ |
4 Watt Discrete LDMOS FET in Ceramic Package
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sirenza.com SIRENZA MICRODEVICES
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