| PART |
Description |
Maker |
| 1SS383 |
DIODE LOW VOLTAGE HIGH SPEED SWITCHING
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS348 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS321 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
Toshiba Semiconductor
|
| 1SS357 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| KDR784 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| 1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| 1SS396 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| 1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application
|
TOSHIBA
|
| BUP602D Q67040-A4229-A2 BUP602-D |
IGBT Duopack (IGBT with Antiparallel ...
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
