| PART |
Description |
Maker |
| 27C512TRPFB-12 27C512TRPFB-15 27C512TRPFS-15 27C51 |
512K (64K x 8-Bit) OTP EPROM 64K X 8 OTPROM, 150 ns, DIP32
512K (64K x 8-Bit) OTP EPROM 64K X 8 OTPROM, 120 ns, DIP32
512K (64K x 8-Bit) OTP EPROM 64K X 8 OTPROM, 200 ns, DIP32
512K (64K x 8-Bit) OTP EPROM 64K X 8 OTPROM, 120 ns, DFP32
|
Maxwell Technologies, Inc
|
| CYD09S18V-100BBC CYD09S18V-100BBI CYD02S18V-133BBC |
512K X 18 DUAL-PORT SRAM, 4.7 ns, PBGA256 17 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-256
FLEx18 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
FLEx18垄芒 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
|
Cypress Semiconductor, Corp.
|
| LE25FV101T |
1M (128k words × 8bits) Serial Flash EEPROM
1M (128k words 】 8bits) Serial Flash EEPROM
|
Sanyo Semicon Device
|
| TC55VL818FF-75 |
512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM)
|
Toshiba Corporation
|
| R1LV0816ASD-5SI R1LV0816ASD-7SI |
8Mb Advanced LPSRAM (512k word x 16bit / 1M word x 8bit)
|
Renesas Electronics Corporation
|
| TC554001AFI-70 TC554001AFTI-85 |
512K word x 8 Static RAM(512K x 8 静RAM)
|
Toshiba Corporation
|
| 24AA64XT-I_CS16K 24AA64XT-I_MC 24AA64XT-I_MNY 24AA |
8K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
8K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
64K I2C?/a> Serial EEPROM
64K I2C Serial EEPROM
64K I2C垄芒 Serial EEPROM
|
Microchip Technology
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| MSM538022E OKISEMICONDUCTORCO.LTD.-MSM538022E MSM5 |
512K X 16 MASK PROM, 80 ns, PDSO44
From old datasheet system
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM
|
OKI ELECTRIC INDUSTRY CO LTD
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| 27C512A 27C512A-12EVS 11173E 27C512A-12ISO 27C512A |
512K (64K x 8) CMOS EPROM 12k4K的8）的CMOS存储
From old datasheet system
512K (64Kx8) CMOS EPROM
|
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| 24LC65 24LC65-SM 24LC65-IP 24LC65-ISM 24LC65-P |
64K2.5VI2CSmartSerialEEPROM
64K 2.5V I 2 C Smart Serial EEPROM
64K 2.5V I 2 C Smart Serial EEPROM 64K2.5VI 2荤智能串行EEPROM
|
MICROCHIP[Microchip Technology]
Microchip Technology Inc.
Microchip Technology, Inc.
MicrochipTechnology
|
