PART |
Description |
Maker |
K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. 16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4E640412E |
(K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
|
Samsung semiconductor
|
K4E660411D-TC60 K4E640411D-JC50 K4E640411D-JC60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
KM44C16100B |
(KM44C16000B / KM44C16100B) 16M x 4bit CMOS Dynamic RAM
|
Samsung semiconductor
|
KM44C16000B KM44C16100B |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
GM71C4403CR-80 GM71C4403CR-60 GM71C4403CR-70 GM71C |
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
|
LG Semicon Co.,Ltd.
|
GM71C4400CJ-80 GM71C4400CLJ-60 GM71C4400CLJ-70 GM7 |
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM 1,048,576字4位的CMOS动态随机存储器
|
LG, Corp. LG Semicon Co.,Ltd.
|
MC-4516CC726 |
16M-Word By 72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
HYB3164400T-60 HYB3164400T-50 HYB3164400J-60 HYB31 |
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
MN4SV17160BT-10 MN4SV17160BT-90 MN4SV1716BT-10 |
16M BIT SYNCHRONOUS DYNAMIC RAM
|
Panasonic Corporation http://
|
MB8516SR72CA-102 MB8516SR72CA-102DG MB8516SR72CA-1 |
16M X 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM
|
Fujitsu Microelectronics Fujitsu Media Devices Limited
|