| PART |
Description |
Maker |
| TA48M0033F TA48M00345F TA48M003F TA48M004F TA48M00 |
150PF 100V 5% MONOLITH CERM CAP
15PF 100V 5% MONOLITH CERM CAP
120PF 100V 5% MONOLITH CERM CAP
2.5V, 3V, 3.3V, 3.45V, 4V, 5V THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR 2.5VV.3V.45V4V电压V的三端低压差电压调节
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| LP62S2048-I LP62S2048M-10LI LP62S2048M-10LLI LP62S |
CAP .01UF 50V CERAMIC MONO 5% 256K × 8位低电压CMOS的SRAM
CAP 1500PF 100V CERAMIC MONO 5% 256K × 8位低电压CMOS的SRAM
.10UF 100V 10% MONOLITH CERM CAP
CAP 10000PF 50V CERAMIC MONO 5%
256K X 8 BIT LOW VOLTAGE CMOS SRAM
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow
High Voltage / High Current Darlington Transistor Arrays
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
(ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
Sprague Electric
ETC[ETC]
List of Unclassifed Manufacturers
VISHAY SPRAGUE
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| BF393 BF393_D ON0206 |
High Voltage Transistors(NPN)
From old datasheet system
CASE 29-4, STYLE 1 TO-2 (TO-26AA)
HIGH VOLTAGE TRANSISTOR(NPN SILICON)
High Voltage Transistor(NPN)
|
Motorola Inc
ON Semiconductor
Motorola, Inc
|
| MSK610 MSK610-15 MSK610B |
VERY WIDE BANDWIDTH HIGH VOLTAGE AMPLIFIER
Ultra Low Quiescent Current - ±12mA for High Voltage Stage
|
Anaren Microwave
M.S. Kennedy Corporatio...
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC3632-Z |
High voltage VCEO=600V High speed tf 0.5ìs Collector to base voltage VCBO 600 V
|
TY Semiconductor Co., Ltd
|
