| PART |
Description |
Maker |
| IRFR9210N IRFRU9120N IRFU9120N FR9120N |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) 功率MOSFET（减振钢板基本\u003d- 100V的，的Rds（on）\u003d 0.48ohm，身份证\u003d- 6.6A
P Channel Straight Lead HEXFET Power MOSFET(P沟道HEXFET功率MOS场效应管) P通道直铅HEXFET功率MOSFET的性（P沟道的HEXFET功率马鞍山场效应管）
P Channel Straight Lead HEXFET Power MOSFET(P娌??HEXFET???MOS?烘?搴??)
|
IRF
International Rectifier, Corp.
|
| 2SK2981 2SK2981-Z 2SK2981-E1 2SK2981-T1 2SK2981-T2 |
Power MOSFET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
NEC Corp.
|
| IRLL024N IRLL024NPBF IRLL024NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
HEXFET Power MOSFET(HEXFET 功率MOS场效应管)
HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??)
4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
IRF[International Rectifier]
|
| APT20M45BVFR |
56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement
POWER MOS V 200V 56A 0.045 Ohm
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.
|
| APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| IRFR5505 IRFU5055 IRFU5505 IRFRU5505 IRFR5505PBF I |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??)
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
http://
|
| IRF530 IRF532FI IRF531FI IRF533FI IRF531 IRF530FI |
N-channel MOSFET, 80V, 9A
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement-type MOS FET
|
NEC[NEC]
|
| APT10090SFLL APT10090BFLL APT10090BFLL_03 APT10090 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管）
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|
| STH15NB50FI H15NB50FI STH15NB50 |
N-CHANNEL Power MOS MOSFET
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
