PART |
Description |
Maker |
2N6796LCC4 |
N-Channel Power MOSFET(Vdss00VId(cont).4A,Rds(on).18ΩN沟道功率型MOS场效应管(Vdss00VId(cont).4A,Rds(on).18Ω
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SEME-LAB[Seme LAB]
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IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET(减振钢板基本:60V的,身份证(续)5A条,的Rds(on):0.027Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本0V的,身份证(续)5A条,的Rds(on.027Ω))
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SemeLAB Seme LAB International Rectifier http://
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B1821BH075C300N B1821BH075C275N B1821BH038C275N B1 |
Cap Screws Cont
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Fastenal
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SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
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TT electronics Semelab Limited Semelab(Magnatec)
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SML80A12 SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
0541323297 0541323397 |
0.5 FPC CONN ASSY ZIF SMT RA(BTM CONT) E/O -LEAD FREE-
|
Molex Electronics Ltd.
|
0541043096 |
0.5 FPC CONN ASSY ZIF SMT RA(BTM CONT) E/O -LEAD FREE-
|
Molex Electronics Ltd.
|
APT50M50JLL |
Volts:500V RDS(ON):0.05Ohms ID(cont:)79Amps|MOSFETs 电压00V电压的RDS(ON):0.05Ohms编号(续:)七九安培| MOSFET
|
Microsemi, Corp.
|
3-84953-0 |
FPC ( Flexible Printed Circuit ) Connectors; 1MM FPC HORZ.TOP CONT.ASSY 30P ( AMP )
|
Tyco Electronics
|
CONT-JA16S 031-50213 SJ010889 |
CONT-JA16S
|
Japan Aviation Electronics Industry, Ltd.
|
2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose N-Channel JFETs MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
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Vishay Siliconix Vishay Intertechnology,Inc.
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