PART |
Description |
Maker |
IRL3102 IRL3102L |
Advanced Process Technology HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)
|
IRF[International Rectifier]
|
IRL640A |
Power MOSFET - BVdss=200V Rds(on)=0.18 ohn Id = 18A Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFIZ24NPBF |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
|
International Rectifier
|
IRFP3415PBF |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
|
International Rectifier
|
IRF7105PBF IRF7105TRPBF |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
|
International Rectifier
|
IRLM220A IRLM220ATF |
200V N-Channel A-FET Advanced Power MOSFET HEXFET Power MOSFET
|
Fairchild Semiconductor International Rectifier
|
IRLM110A IRLM110ATF |
N-CHANNEL MOSFET HEXFET Power MOSFET Advanced Power MOSFET 100V N-Channel Logic Level A-FET
|
International Rectifier FAIRCHILD[Fairchild Semiconductor]
|
IRLI3705NPBF IRLI3705NPBF-15 |
HEXFET?Power MOSFET HEXFET㈢Power MOSFET ADVANCED PROCESS TECHNOLOGY
|
International Rectifier
|
IRF610A |
Advanced Power MOSFET N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为200V,导通电阻为1.5Ω,漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
IRFS840A |
N-Channel Power MOSFET00V.85Ω.6AN沟道功率MOS场效应管(漏源电00V,导通电.85Ω,漏电流4.6A 4.6 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
|
IRLWI620A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
STK1625F |
Advanced Power MOSFET
|
AUK[AUK corp]
|