| PART |
Description |
Maker |
| IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
International Rectifier, Corp.
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| JANTX2N6762 JANTXV2N6762 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
|
IRF[International Rectifier]
|
| IRFP460 6179 -IRFP460 |
N-Channel 500V-0.22惟-20A- TO-247 PowerMESH MOSFET(N娌??MOSFET)
N-Channel 500V-0.22Ω-20A- TO-247 PowerMESH MOSFET(N沟道MOSFET) N沟道500V -0.22Ω- 20A条至247 PowerMESH MOSFET的（不适用沟道MOSFET的）
N-Channel Power MOSFET
N - CHANNEL 500V - 0.22 - 20 A - TO-247 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET
|
IXYS, Corp.
意法半导
ST Microelectronics
STMicroelectronics
|
| IRF9510S IRF9510STRL IRF9510STRR |
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-4.0A)
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-4.0A)
|
IRF[International Rectifier]
|
| FQP9N50C FQPF9N50C FQPF9N50CT |
500V N-Channel MOSFET
500V N-Channel Advance Q-FET C-Series
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQU5N50C FQD5N50C FQD5N50CTM FQD5N50CTF |
500V N-Channel Advance QFET C-Series
500V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI13N50C FQB13N50C FQI13N50CTU |
500V N-Channel MOSFET
500V N-Channel Advance Q-FET C-Series
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| FQB9N50C FQI9N50C FQB9N50CTM FQI9N50CTU |
500V N-Channel Advance Q-FET C-Series
500V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDI12N50TU FDB12N50TM FDI12N50 FDB12N50 |
N-Channel MOSFET 500V, 11.5A, 0.65Ω
N-Channel MOSFET 500V, 11.5A, 0.65楼?
N-Channel MOSFET 500V, 11.5A, 0.65ヘ
|
Fairchild Semiconductor
|
| SFFC40-28 |
4.2 AMP 600 VOLTS 1.2ohm N-Channel Power MOSFET
|
Solid States Devices, Inc.
|
