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TLP4592G - The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.

TLP4592G_4114866.PDF Datasheet

 
Part No. TLP4592G
Description The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.

File Size 211.37K  /  6 Page  

Maker


Toshiba Semiconductor



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: TLP421
Maker: TOSHIBA
Pack: DIP4
Stock: 3983
Unit price for :
    50: $0.16
  100: $0.15
1000: $0.14

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Homepage http://www.semicon.toshiba.co.jp/eng/
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 Full text search : The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.
 Product Description search : The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.


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