PART |
Description |
Maker |
HWF1686NC |
3.5 W L-band power FET non-via hole chip
|
HEXAWAVE
|
FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册,S波段功率GaAs场效应晶体管 0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
FLK027WG |
X, Ku Band Power GaAs FET
|
Eudyna Devices Inc
|
NE6510179 NE6510179A NE6510179A-T1 |
1 W L-BAND POWER GaAs HJ-FET
|
NEC[NEC]
|
MGF0910A_1 MGF0910A MGF0910A1 |
L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLX207MH-12 |
X, Ku Band Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|