PART |
Description |
Maker |
Q62702-B403 BB620 |
From old datasheet system Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I) Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 硅变容二极管(对于Hyperband电视/录像机调谐器,屋宇署一 Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 30 V, SILICON, VARIABLE CAPACITANCE DIODE
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SIEMENS[Siemens Semiconductor Group] Siemens Group SIEMENS AG
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HVU306C |
Diodes>Variable Capacitance VARIABLE CAPACITANCE DIODE FOR VHF TUNER
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Renesas Electronics Corporation
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RKV5000DKK |
Diodes>Variable Capacitance Variable Capacitance Diode for UHF/VHF tuner Vari-Cap Diodes for Electric Tuning
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RENESAS[Renesas Electronics Corporation] http://
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HVU355B |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
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Renesas Electronics Corporation
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HVL355CM |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
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Renesas Electronics Corporation
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BB639C Q62702-B695 |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) VHF BAND, 39 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
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Johanson Dielectrics, Inc. SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
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1T362 |
Silicon Variable Capacitance Diode Designed For Electronic Tuning Of TV Tuner(硅可变电容二极管(用于电视调谐器的电子调谐)) 硅变容二极管设计电子调谐电视调谐器(硅可变电容二极管(用于电视调谐器的电子调谐) Silicon Variable Capacitance Diode
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Sony, Corp. Sony Corporation
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V27D V27BCO V27CCO V27E V27ECCO V27ACO V27EACO V12 |
27 pF, 22 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 72 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 110 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 70 V, SILICON, VARIABLE CAPACITANCE DIODE
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1N5474 1N5448A 1N5443B 1N5447C 1N5445A 1N5476A JAN |
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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1N5455BCO 1N5468BCO 1N5443BCO 1N5695BCO 1N5444ACO |
82 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
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