PART |
Description |
Maker |
K4S561632E-UC75 K4S561632E-UL75 K4S561632E-UL60 K4 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与内存规格4 TSOP-II免费(符合RoHS
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IRLMS1503 |
30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
IRLMS1902 IRLMS1902TR |
20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
SI3443DVTRPBF |
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
X28HC16J-55 X28HC16SI-55 X28HC16J-90 X28HC16PI-70 |
90NS, 44 PLCC, IND TEMP(FLASH) x8 EEPROM 120NS, TSOP, COM TEMP(FLASH) 150NS, 44 TSOP, IND TEMP(FLASH) 90NS, TSOP, IND TEMP(FLASH) 70NS, TSOP, IND TEMP, GREEN(FLASH) x8的EEPROM
|
Electronic Theatre Controls, Inc.
|
K4S641632H-TL60 K4S641632H-TL75 K4S640832H-TC75 K4 |
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费(符合RoHS 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费(符合RoHS
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronics
|
V54C3256164VAT V54C3256164VBT V54C3256404VB V54C32 |
256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
HSMS286L-BLK HSMS286L-TR1 HSMS286P-BLK HSMS286P-TR |
ARRAY OF INDEPENDENT DIODES|TSOP BRIDGE/RING DIODE ARRAY|TSOP 环二极管阵列|的TSOP
|
Avago Technologies, Ltd.
|
X9279TB X9279TBI X9279TB-2.7 |
Single Digitally-Controlled (XDCP) Potentiometer 单数字控制(数字电位器)电位 IC,FLASH MEMORY,64 MB,120NS,3.0V,48 TSOP AM29DL800 FLASH MEM 8MB 70NS TSOP-48
|
Xicor Inc.
|
UM612 UM614 UM617 UM604 UM628 UM605 UM611 UM622 UM |
15 Watt DC-DC Converters Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:64-BGA; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
|
List of Unclassifed Man... List of Unclassifed Manufacturers N.A. Unisonic Technologies ETC[ETC] Electronic Theatre Controls, Inc.
|
M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
CY14B101MA-ZSP25XIT CY14B101MA-ZSP45XI |
1 Mbit (128K x 8/64K x 16) nvSRAM with Real Time Clock; Organization: 64Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 1 Mb; Package: TSOP 64K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54
|
CYPRESS SEMICONDUCTOR CORP
|