| PART |
Description |
Maker |
| 2SC3328 E000832 |
From old datasheet system
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5028 E001013 |
From old datasheet system
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN6003 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
|
TOSHIBA
|
| RN5002 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
|
TOSHIBA
|
| GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| 2SA1761 E000553 |
From old datasheet system
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SD1314 E001106 |
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SD1412A EE08319 |
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)
From old datasheet system
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| GT30J122A |
Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications
|
Toshiba Semiconductor
|
| 2SB1067 E000618 |
TRANSISTOR (MICRO NOTER DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)
MICRO MOTER DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
