PART |
Description |
Maker |
1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin Diode Switching 50V 3A 2-Pin Case A GOLD BOUNDED GERMANUM DIODE Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R Diode Switching 125V 0.0003A 2-Pin DO-35 Diode Switching 50V 0.005A 2-Pin Case H GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
MMBD7000LT1 |
Dual Switching Diode 200mA Surface Mount Switching Diode-100V
|
WILLAS ELECTRONIC CORP
|
KDS135 |
Switching Diode SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
CPD80V10 |
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
SMBD2835 SMBD2836 Q68000-A8436 Q68000-A8547 |
Silicon Switching Diode Array 0.25 A, 2 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system Silicon Switching Diode Array with co...
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
CMDD7006 |
SMD Switching Diode Single: High Voltage SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
CMHD7006 |
SMD Switching Diode Single: High Voltage SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
CMUDW6001 |
SURFACE MOUNT ULTRA LOW LEAKAGE SILICON SWITCHING DIODE 75V, 250mA Ultra Low Leakage Switching Diode in the SOT-523W package
|
Central Semiconductor Corp
|