PART |
Description |
Maker |
MID100-12A3 MII100-12A3 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS Corporation
|
VUB50-16PO1 |
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS
|
CM100DU-34KA09 |
IGBT MODULES HIGH POWER SWITCHING USE 100 A, 1700 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
SKM145GB063DN SKM145GAL063DN |
Superfast NPT-IGBT Modules 200 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
2ED300C17-ST |
Dual IGBT Driver Board For Infineon Medium and High Power IGBT Modules
|
Infineon Technologies AG
|
SEMIX252GB126HDS |
Trench IGBT Modules 270 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
SEMIX151GB12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
SEMIX503GB126HDS |
Trench IGBT Modules 480 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
SEMIX453GB12T4S |
Trench IGBT Modules 685 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
MDI100-12A3 MII100-12A3 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp. IXYS Corporation ETC[ETC]
|