| PART |
Description |
Maker |
| AGR21045EF |
45 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21060E AGR21060EF AGR21060EU |
60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR26045EF |
45 W, 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR26125E AGR26125EF AGR26125EU |
125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| EVAL-ADG936EB ADG936 ADG936BCP ADG936BCP-500RL7 AD |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT 宽带4千兆赫，36千兆赫的CMOS 1.65 V分贝.75 V的隔离，双路SPDT
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20
|
AD[Analog Devices]
Analog Devices, Inc.
ANALOG DEVICES INC
|
| RMPA61810 |
6-18 GHz 1W Power Amp
Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC
|
FAIRCHILD[Fairchild Semiconductor]
|
| AD8341ACPZ-WP1 AD8341-EVAL CPZ-REEL72 |
1.5 GHz to 2.4 GHz RF Vector Modulator 1.5 GHz.4 GHz射频矢量调制
|
Analog Devices, Inc.
|
| UPB1502GR UPB1502GR1 UPB1502GR1-E1 UPB1502GR-E1 |
1.7 GHz/ 2.0 GHz LOW-POWER TWO-MODULUS PRESCALER DIVIDED-BY-64/65, 128/129 1.7千兆 2.0 GHz的低功耗双分频DIVIDED-BY-64/65，一百二十九分之一百二十八
1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 2.0GHz 定标
|
NEC, Corp.
NEC Corp.
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TGA6316 TGA6316-EEU |
6 - 17 GHz Dual-Channel Power Amplifier
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| ATF-36163 ATF-36163-BLKG ATF-36163-TR1G ATF-36163- |
1.5?8 GHz Surface Mount Pseudomorphic HEMT
1.5-18 GHz Surface Mount Pseudomorphic HEMT
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
Broadcom Corporation.
AVAGO TECHNOLOGIES LIMITED
|
