PART |
Description |
Maker |
H2260FNL |
mdl,sin,100p,1:1,sm,tu
|
Pulse A Technitrol Comp...
|
EVALNV1D IC-NV IC-NVTSSOP20 |
6-BIT Sin/D FLASH CONVERTER
|
IC-Haus GmbH
|
IC-RC1000 |
SIN/COS SIGNAL SAFETY MONITOR IC
|
IC-Haus GmbH
|
IC-NQL IC-NQLTSSOP20 |
13-bit Sin/D CONVERTER WITH SSI INTERFACE
|
IC-Haus GmbH
|
1210502177 |
SIN Form A voer mould with circuit
|
Molex Electronics Ltd.
|
IC-NQL11 |
13-bit Sin/D CONVERTER WITH SSI INTERFACE
|
IC-Haus GmbH
|
IC-MQEVALMQ1D IC-MQTSSOP20 |
PROGRAMMABLE 9-BIT Sin/Cos INTERPOLATION IC WITH RS422 DRIVER
|
IC-Haus GmbH
|
IC-LGC |
21-BIT OPTICAL POSITION ENCODER WITH SERIAL/PARALLEL AND SIN/COS OUTPUT
|
IC-Haus GmbH
|
IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NS |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) (IRFZ44NL / IRFZ44NS) Power MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 49A条(丁)|63AB
|
IRF[International Rectifier] International Rectifier, Corp.
|
MTP6N60EWC MTP6P20EW MTP6P20EWC MTP3N100E16 MTP3N1 |
6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 33 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc. MOTOROLA INC
|
VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
|
Microsemi, Corp. Microsemi Corporation
|
IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PolarHV Power MOSFET
|
Infineon Technologies AG IXYS CORP IXYS Corporation
|
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