| PART |
Description |
Maker |
| HMC817LP4E10 |
SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz
|
Hittite Microwave Corporation
|
| HMC817LP4E |
SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz
|
Hittite Microwave Corporation
|
| 618LP3E HMC618LP311 HMC618LP3E |
GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz
|
Hittite Microwave Corporation
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HMC965LP5E |
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR
|
Hittite Microwave Corporation
|
| AS193-000 |
AS193-000:PHEMT GaAs IC High Linearity 3 V Control|DC-6 GHz Plastic Packaged and Chip|SPST
PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| HMC340LP5 |
GaAs MMIC SMT DOUBLE-BALANCED DUAL MIXER/ 1.7 - 4.5 GHz
GaAs MMIC SMT DOUBLE-BALANCED DUAL MIXER, 1.7 - 4.5 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| AS195-306 |
PHEMT GaAs IC High Power SP5T Switch 0.1-2 GHz PHEMT的砷化镓集成电路大功率SP5T开0.1-2千兆
PHEMT GaAs IC High Power SP5T Switch 0.1? GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| AS166-300 |
PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz PHEMT的砷化镓集成电路大功率SP4T开0.1-2.5千兆
PHEMT GaAs IC High Power SP4T Switch 0.1.5 GHz
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| HMC102212 |
GaAs pHEMT MMIC
|
Hittite Microwave Corporation
|
| TGF2040 |
400 um Discrete GaAs pHEMT
|
TriQuint Semiconductor
|
