| PART |
Description |
Maker |
| DSF-28-0001 DSF-28-0002 DSF-28-0003 DSF-28-0004 DS |
Storage Choke, flat design
|
Schurter Inc.
|
| M80 M80-6-12 M80-6-18 M80-9-10 M80-9-18 M80-7-45 M |
M80 Series: Multi-E Choke
High Energy Storage Chokes for Inverter Applications
|
PREMO CORPORATION S.L
|
| DSO1-25-0001 DSO1-25-0002 DSO1-25-0003 DSO1-25-000 |
Storage Choke, open version, without socket
|
Schurter Inc.
|
| DS1-40-0001 DS1-40-0002 DS1-20-0003 DS1-40-0003 DS |
Storage Choke, fully potted resign
1 ELEMENT, 800 uH, GENERAL PURPOSE INDUCTOR
|
Schurter Inc.
|
| DENO DENO-25-0001 DENO-23-0001 DENO-40-0001 |
Ground wire choke, open design
|
Schurter Inc.
|
| 5614-RC 5609-RC 5629-RC 5619-RC 5617-RC 5615-RC 56 |
High I , Radial Choke 1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
High I , Radial Choke 1 ELEMENT, 2500 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
High Current Chokes
|
Bourns, Inc.
Bourns Electronic Solutions
BOURNS INC
|
| 9250-684-RC 9250-332-RC 9250-182-RC 9250-122-RC 92 |
CHOKE RF MOLDED 680UH FERRITE 1 ELEMENT, 680 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 3.3UH IRON 1 ELEMENT, 3.3 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 1.8UH IRON 1 ELEMENT, 1.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 1.2UH IRON 1 ELEMENT, 1.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 3900UH FERRITE 1 ELEMENT, 3900 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED .68UH PHENOLIC 1 ELEMENT, 0.68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 18UH FERRITE 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 82UH FERRITE 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 15UH FERRITE 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED .47UH PHENOLIC 1 ELEMENT, 0.47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
RF Choke; Series:9250; Inductance:4.7uH; Inductance Tolerance: /- 10 %; Q Factor:44; Self Resonant Frequency:70MHz; Terminal Type:Axial Leaded; Core Material:Iron; Current Rating:380mA; DC Resistance Max:0.55ohm
|
Bourns, Inc.
BOURNS INC
|
| BUL54BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL54ASMD |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL52A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
|
| BUL58A BUL56A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
|
