Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327XTSA1 97Y1261 |
Infineon Technologies AG |
Mosfet, N-Ch, 100V, 1.8A, 150Deg C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V Rohs Compliant: Yes |Infineon BSP372NH6327XTSA1 |
250: USD0.529 100: USD0.547 50: USD0.58 25: USD0.613 10: USD0.645 1: USD0.79
|
28 |
BSP372NH6327XTSA1 86AK4512 |
Infineon Technologies AG |
Mosfet, N-Ch, 100V, 1.8A, Sot-223 Rohs Compliant: Yes |Infineon BSP372NH6327XTSA1 |
10000: USD0.352 6000: USD0.376 4000: USD0.385 2000: USD0.393 1000: USD0.415
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327XTSA1 BSP372NH6327XTSA1TR-ND |
Infineon Technologies AG |
MOSFET N-CH 100V 1.8A SOT223-4 |
25000: USD0.28638 10000: USD0.28924 5000: USD0.31238 2000: USD0.32973 1000: USD0.37023
|
11000 |
BSP372NH6327XTSA1 BSP372NH6327XTSA1CT-ND |
Infineon Technologies AG |
MOSFET N-CH 100V 1.8A SOT223-4 |
500: USD0.43502 100: USD0.5206 10: USD0.752 1: USD0.87
|
1084 |
BSP372L6327HTSA1 BSP372L6327HTSA1DKR-ND |
Infineon Technologies AG |
MOSFET N-CH 100V 1.7A SOT223-4 |
1: USD0.81
|
0 |
BSP372L6327HTSA1 BSP372L6327HTSA1TR-ND |
Infineon Technologies AG |
MOSFET N-CH 100V 1.7A SOT223-4 |
|
0 |
BSP372NH6327XTSA1 BSP372NH6327XTSA1DKR-ND |
Infineon Technologies AG |
MOSFET N-CH 100V 1.8A SOT223-4 |
500: USD0.43502 100: USD0.5206 10: USD0.752 1: USD0.87
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327XTSA1 97Y1261 |
Infineon Technologies AG |
Power MOSFET, N Channel, 100 V, 1.8 A, 230 Milliohms, SOT-223, 4 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 97Y1261) |
100: USD0.553 50: USD0.586 25: USD0.619 10: USD0.651 1: USD0.796
|
0 |
BSP372NH6327XTSA1 BSP372NH6327XTSA1 |
Infineon Technologies AG |
Power MOSFET, N Channel, 100 V, 1.8 A, 230 Milliohms, SOT-223, 4 Pins, Surface Mount - Tape and Reel (Alt: BSP372NH6327XTSA1) |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327XTSA1 726-BSP372NH6327XTSA |
Infineon Technologies AG |
MOSFETs SMALL SIGNAL N-CH |
1: USD0.84 10: USD0.665 100: USD0.521 500: USD0.435 1000: USD0.286
|
18138 |
BSP372N H6327 726-BSP372NH6327 |
Infineon Technologies AG |
MOSFET SMALL SIGNAL N-CH |
1: USD0.87 10: USD0.764 100: USD0.521 500: USD0.435 1000: USD0.37 2000: USD0.335 5000: USD0.328
|
1810 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327XTSA1 82704891 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R |
1000: USD0.3779
|
117000 |
BSP372NH6327XTSA1 77265015 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R |
1000: USD0.3788 500: USD0.3938 200: USD0.4088 100: USD0.4225 72: USD0.4388
|
1980 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327
|
Infineon Technologies AG |
|
397: USD0.216 115: USD0.2531 31: USD0.4388 8: USD0.675
|
429 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327
|
Infineon Technologies AG |
POWER FIELD-EFFECT TRANSISTOR, 1.8A I(D), 100V, 0.23OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
41: USD0.4 9: USD0.5 1: USD0.6
|
75 |
BSP372NH6327
|
Infineon Technologies AG |
POWER FIELD-EFFECT TRANSISTOR, 1.8A I(D), 100V, 0.23OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
134: USD0.27 29: USD0.45 1: USD0.9
|
343 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327XTSA1 BSP372NH6327XTSA1 |
Infineon Technologies AG |
Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223 |
1000: USD0.364 500: USD0.373 50: USD0.497 25: USD0.547 10: USD0.62 1: USD0.798
|
493 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327XTSA1
|
Infineon Technologies AG |
Single N-Channel 100 V 270 mOhm 14.3 nC OptiMOS™ Power Mosfet - SOT-223 |
|
3000 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327
|
Infineon Technologies AG |
OPTIMOS SMALL-SIGNAL-TRANSISTOR Power Field-Effect Transistor, 1.8A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
2935 |
BSP372L6327
|
Infineon Technologies AG |
SIPMOS SMALL-SIGNAL TRANSISTOR Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
241 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372N H6327 TMOSS6559 |
Infineon Technologies AG |
N-CH MOS-FET 1,7A 100V SOT223 |
1000: USD0.2872 2000: USD0.2708 4000: USD0.2544 6000: USD0.2298 10000: USD0.2215
|
1000 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327XTSA1
|
Infineon Technologies AG |
INSTOCK |
|
12374 |
BSP372L6327
|
Infineon Technologies AG |
INSTOCK |
|
12374 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327XTSA1 17S7642 |
Infineon Technologies AG |
Infineon Technologies N channel SIPMOS small signal transistor, 100 V, 1.8 A, SOT-223, BSP372NH6327XTSA1 |
5: EUR0.28
|
1896 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327XTSA1 C1S322000898121 |
Infineon Technologies AG |
MOSFET |
1000: USD0.303 500: USD0.315 200: USD0.327 100: USD0.338 50: USD0.351 10: USD0.381 5: USD0.433
|
1980 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327XTSA1
|
Infineon Technologies AG |
Single N-Channel 100 V 270 mOhm 14.3 nC OptiMOS� Power Mosfet - SOT-223 |
1000: USD0.26 9000: USD0.2427
|
9000 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327
|
Infineon Technologies AG |
|
|
26463 |
BSP372NH6327XTSA1
|
Infineon Technologies AG |
|
|
91605 |
BSP372 E6327
|
Infineon Technologies AG |
|
|
4 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSP372NH6327
|
Infineon Technologies AG |
BSP372NH6327 |
|
0 |
BSP372NH6327XTSA1
|
Infineon Technologies AG |
BSP372NH6327XTSA1 |
|
0 |
|
|