| PART |
Description |
Maker |
| OC28 |
Germanium NPN Low Power Transistors
|
Transistor
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| RQG1001UP-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation.
|
| 1N55 1N64 1N73 1N107 1N273 1N277 1N279 1N281 1N289 |
1N55
1N64
1N73
1N3082
1N3865
1W569 1W634
AA112 AA113 AA117 AA118 AA119
DR213
HG5007 HG50089
T7G T17G T19G
GERMANIUM DOIDES
GERMANIUM DOIDES
GERMANIUM DIODES
|
American Microsemiconductor Inc.
American Microsemicondu...
American Accurate Compo...
|
| BFR750L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| NESG3400M01 NESG3400M01-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| BFU710F |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU730LX-15 BFU730LX |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU710F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| 1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
