PART |
Description |
Maker |
HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES HSMS-2802 · Low reverse leakage Schottky diode HSMS-2803 · Low reverse leakage Schottky diode HSMS-2804 · Low reverse leakage Schottky diode HSMS-2805 · Low reverse leakage Schottky diode HSMS-2808 · Low reverse leakage Schottky diode HSMS-280B · Low reverse leakage Schottky diode HSMS-280C · Low reverse leakage Schottky diode HSMS-280E · Low reverse leakage Schottky diode HSMS-280F · Low reverse leakage Schottky diode HSMS-280K · Low reverse leakage Schottky diode HSMS-280L · Low reverse leakage Schottky diode HSMS-280M · Low reverse leakage Schottky diode HSMS-280N · Low reverse leakage Schottky diode HSMS-280R · Low reverse leakage Schottky diode
|
http:// Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
|
BAS52 BAS52-02V |
Silicon Schottky Diode Schottky Diodes - Low current rectification and high speed switching Schottky diode
|
Infineon Technologies A... Infineon Technologies AG
|
IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V) Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
BAT54WS BAT54WS-7-F |
SURFACE MOUNT SCHOTTKY BARRIER DIODE DIODE SCHOTTKY 30V 200MW SOD-323 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Diodes Incorporated Diodes, Inc.
|
BAT14 BAT14-03W |
Silicon Schottky Diode Schottky Diodes - RF Schottky diode for DBS mixer application to 12GHz
|
Infineon Technologies A... Infineon Technologies AG
|
ZHCS1006 ZHCS1006TA |
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT?/a> SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ??uperBAT??/td>
| SOT-23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT DIODE SCHOTTKY SOT-23 肖特基二极管采用SOT - 23 High Current Schottky Diode
|
Fairchild Semiconductor Zetex Semiconductors Zetex Semiconductor PLC
|
BAS40DW-04 BAS40DW-05-TP BAS40DW-06-TP BAS40TW BAS |
200mW SCHOTTKY BARRIER Diode DIODE SCHOTTKY 200MW 40V SOT363 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE DIODE SCHOTTKY ARRAY 40V SOT-363 0.2 A, 40 V, 3 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
BAS70DW-04 BAS70DW-06-TP BAS70TW BAS70DW-05 |
200mW SCHOTTKY BARRIER Diode DIODE SCHOTTKY 200MW 70V SOT363 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
CMOSH-4E |
SURFACE MOUNT ENHANCED SPECIFICATION SILICON SCHOTTKY DIODE SMD Schottky Diode Single: High Current
|
Central Semiconductor Corp.
|
BAT54WX-TP |
DIODE SCHOTTKY 30V SOD-523 0.2 A, 30 V, SILICON, SIGNAL DIODE 200mWatt, 30Volt Schottky Diodes
|
Tianjin Global Magnetic Card Co., Ltd. Micro Commercial Components
|
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, μCool™ N-Channel, with 2.0 A Schottky Barrier Diode
|
ON Semiconductor
|