| PART |
Description |
Maker |
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT(1.8V超低VCE(sat)的绝缘栅双极晶体 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
| PBSS4350SPN PBSS4350SPN115 PBSS4350SPN-15 |
50 V, 2.7 A NPN-PNP low VCEsat (BISS) transistor
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| IXGN72N60A3 |
Ultra Low Vsat PT IGBT for up to 5kHz switching
|
IXYS Corporation
|
| MMIX1G120N120A3V1 |
Ultra-Low-Vsat PT IGBT for 3kHz Switching
|
IXYS Corporation
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IRG7PH28UD1PBF |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
|
International Rectifier
|
| SGS6N60UFD SGS6N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
Fairchild Semiconductor
|
| SGS13N60UFD SGS13N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGW6N60UFD SGW6N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGW13N60UFD SGW13N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
