| PART |
Description |
Maker |
| KDR411 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| MA4E2501L-1290W MA4E2501-1290 MA4E2501L-1290 MA4E2 |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
|
MACOM[Tyco Electronics]
|
| KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| KDR411S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW POWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
| PMEG4010ER10 PMEG4010ER |
1 A low V_F MEGA Schottky barrier rectifier 1 A, 40 V, SILICON, SIGNAL DIODE
1 A low VF MEGA Schottky barrier rectifier
|
NXP Semiconductors N.V.
|
| GD500SD |
The GD500SD is designed for low power rectification and high reliability.
SURFACE MOUNT SCHOTTKY BARRIER DIODE
SURFACE MOUNT SCHOTTKY BARRIER DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| MADS-002502-1246HP MADS-002502-1246LP MADS-002502- |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
| SD101AW SD101BW SD101CW |
SCHOTTKY BARRIER SWITCHING DIODE
(SD101AW - SD101CW) SURFACE MOUNT SCHOTTKY BARRIER DIODE
|
DIODES[Diodes Incorporated]
|
| HSMS-2810-BLK HSMS-2810-TR1 HSMS-2810-TR2 HSMS-281 |
HSMS-281C · low 1/f noise general purpose Schottky diode
HSMS-2810 · Low 1/f noise general purpose Schottky diode
HSMS-281F · low 1/f noise general purpose Schottky diode
Surface Mount RF Schottky Barrier Diodes
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
http://
|
| YG865C04R |
Low IR Schottky barrier diode
20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Fuji Electric
FUJI ELECTRIC CO LTD
|
