PART |
Description |
Maker |
SZ3GA91 SZ3GA10 SZ3GA100 SZ3GA11 SZ3GA110 SZ3GA12 |
3.0 W and 4.0 W 7.5 - 510 VOLTS ZENER DIODES
|
SSDI[Solid States Devices, Inc]
|
ST150A91 ST150A10 ST150A100 ST150A11 ST150A110 ST1 |
150 WATT 7.5 - 510 VOLTS TRANSIENT SUPPRESSOR
|
Solid States Devices, I... SSDI[Solid States Devices, Inc] http://
|
SKKT330/08E |
Thyristor / Diode Modules 510 A, 800 V, SCR
|
SEMIKRON
|
MAN5760 MAN5460 MAN5350 MAN5960 MAN5360 MAN5450 MA |
0.510 INCH (13MM) SEVEN SEGMENT DISPLAYS 7 SEG NUMERIC DISPLAY, RED, 13 mm
|
QT[QT Optoelectronics]
|
NDL7910P NX8501BG-CA NX8501BG-BA NX8501 NX8501CC N |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 510纳米光纤通信InGaAsP的应变量子阱的DC -异质结激光二极管模块
|
NEC, Corp. NEC Corp. http://
|
GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM(宽30
|
Intel, Corp. Intel Corp.
|
POS-765P |
VCO, 486 MHz - 510 MHz HERMETIC SEALED, CASE A06, 8 PIN
|
Mini-Circuits
|
HPQ-06 |
510 MHz - 570 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS ROHS COMPLIANT, CASE AT577, 6 PIN
|
Mini-Circuits
|
MA4PK2000 MA4PK2000-3000 |
2000 Volt & 3000 Volt PIN Diodes MA4PK200X & MA4PK300X
|
Tyco Electronics
|
MA4P7470F-1072T |
2000 Volt & 3000 Volt PIN Diodes MA4PK2000, MA4PK3000
|
M/A-COM Technology Solutions, Inc.
|
AT29LV020NBSP AT29LV020 |
2M bit, 3-Volt Read and 3-Volt Write Flash From old datasheet system
|
Atmel Corp
|
AT25DF041A-SSHF-B AT25DF041A-SSHF-T AT25DF041A-SSH |
4-megabit 2.3-volt or 2.7-volt Minimum SPI Serial Flash Memory
|
ATMEL Corporation
|