PART |
Description |
Maker |
NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
NX8346TB |
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
LT050MS LT050PS |
Compact Laser Diode for DVD(635nm-5mW) Red Laser Diode
|
SHARP[Sharp Electrionic Components]
|
DL-3150-101 DL-3150-102 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
DL-3147-261 DL-3147-161 |
Red Laser Diode Index Guided AlGaInP Laser Diode 70
|
Sanyo Semiconductor
|
DL-3147-021 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
Sanyo Semiconductor
|
DL-6140-201 |
Infrared Laser Diode High Power Laser Diode
|
SANYO
|
OL3204N-40 OL3201N-40 |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1280-1330nm, THROUGH HOLE MOUNT, FC CONNECTOR 1.3 レm High-Power Laser-Diode DIP Module 1.3レ米高功率激光二极管双酯模块 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle 1.3レ米高功率激光二极管双酯模块 1.3 μm High-Power Laser-Diode DIP Module 1.3 m High-Power Laser-Diode DIP Module
|
LAPIS SEMICONDUCTOR CO LTD OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets] OKI electronic components
|
STH51002Z TH51002Z |
From old datasheet system 1300nm Laser in Coaxial TO-Package 1280 nm, LASER DIODE
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|