| PART |
Description |
Maker |
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 2950103 |
Diode block - EMG 45-DIO 8E
|
PHOENIX CONTACT
|
| BAT54S-V BAT54-V BAT54A-V BAT54-V10 BAT54C-V BAT54 |
Small Signal Schottky Diodes, Single and Dual
0.2 A, 30 V, SILICON, SIGNAL DIODE
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| CHA2391 CHA2391-99F_00 CHA2391-99F/00 |
36-40GHz Very Low Noise Amplifier
DIO, SWITCH MODE POWER RECTIFIER, MBRD835L, SMT, DPAK36
|
United Monolithic Semicondu...
United Monolithic Semiconductors
|
| D83C D13-1C D13-3C D13-2C D14-2C D14-1C D14-3C D10 |
Single-In-Line
DIODE NETWORKS D SERIES
0.1 A, 5 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, 7 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, 13 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
|
BI TECHNOLOGIES CORP
|
| VF12 VF5 VF20 |
0.1 A, 12000 V, SILICON, SIGNAL DIODE
0.13 A, 5000 V, SILICON, SIGNAL DIODE
0.09 A, 20000 V, SILICON, SIGNAL DIODE
|
MICROSEMI CORP
|
| PRS07 PRS07J PRS07D PRS07G PRS07G115 PRS07J115 PRS |
0.6 A, 200 V, SILICON, SIGNAL DIODE
0.6 A, 600 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
0.6 A, 400 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
Fast soft-recovery rectifiers
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NTE2945 |
SM DIO/SMBJ12A SMB UNI-DIR MOSFET的N沟道，增强模式高速开
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
|
| AEC-6913-A1M-1010 AEC-6913-A2M-1010 |
Design for Industrial Automation, Reliable Design: RS-422/485 10x. DIO
|
AAEON Technology
|
| FFM1200W FFM1800W FFM1600W FFM1500W FFM1400W FFM10 |
0.5 A, 1800 V, SILICON, SIGNAL DIODE
0.5 A, 1500 V, SILICON, SIGNAL DIODE
FAST RECOVERY RECTIFIER VOLTAGE RANGE 1000 to 1800 Volts CURRENT 0.5 Ampere
|
RECTRON LTD
Rectron Semiconductor
|
|
