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RJP60F4DPM - 600 V - 30 A - IGBT High Speed Power Switching

RJP60F4DPM_4421376.PDF Datasheet


 Full text search : 600 V - 30 A - IGBT High Speed Power Switching
 Product Description search : 600 V - 30 A - IGBT High Speed Power Switching


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PART Description Maker
IXGP16N60C2D1 IXGA16N60C2 HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB
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STGW20V60DF STGWT20V60DF STGB20V60DF STGP20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT
Low thermal resistance
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List of Unclassifed Manufac...
STMicroelectronics
SGH80N60UFD SGH80N60UFDTU Discrete, High Performance IGBT with Diode
Ultrafast IGBT
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 80 A, 600 V, N-CHANNEL IGBT
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
SGL160N60UFD SGL160N60UFDTU 240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 160 A, 600 V, N-CHANNEL IGBT, TO-264AA
Ultrafast IGBT
Discrete, High Performance IGBT with Diode
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
STGB30H60DF STGF30H60DF STGP30H60DF STGW30H60DF    Low thermal resistance
600 V, 30 A high speed trench gate field-stop IGBT
STMicroelectronics
ST Microelectronics
CM150DU-12F IGBT MODULES HIGH POWER SWITCHING USE
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Mitsubishi Electric Semiconductor
MGP11N60ED_D ON1850 MGP11N60ED ON1849 IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
From old datasheet system
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
ON Semiconductor
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IXYS Corporation
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Mitsubishi Electric Semiconductor
Toshiba Corporation
IRG4PC50F IRG4PC50F-E 70 A, 600 V, N-CHANNEL IGBT, TO-247AC
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
IRF[International Rectifier]
 
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RJP60F4DPM Polarity RJP60F4DPM Channel RJP60F4DPM 参数网 RJP60F4DPM rectifier RJP60F4DPM asynchronous
 

 

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