| PART |
Description |
Maker |
| HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
| TAN-321 |
Audio IC Application Circuit Application Circuit Example of 3-band (FM, MW and LW) 5-V Tuner TA2149BN TC9257F
|
TOSHIBA
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| KTS1C1S250 |
Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode
|
TY Semiconductor Co., Ltd
|
| VTD175 VTD170XS VTD170 VTD175L VTD175S VTD175XL VT |
85 ∑C to -40 ∑C 10 times % typical resistance change
85 ∑C to -40 ∑C 10 times 【5 % typical resistance change
POLYFUSE RESETTABLE FUSES
85 °C to -40 °C 10 times ±5 % typical resistance change
|
Littelfuse, Inc.
|
| STCC02-ED5 STCC02-E |
CONTROL CIRCUIT FOR HOME APPLIANCE MCU BASED APPLICATION
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| EPGZ3200 |
EPGZ3200 ROMless & Flash memory application circuit
|
|
| UPG2417T6M UPG2417T6M-E2 UPG2417T6M-E2-A |
GaAs Integrated Circuit SP6T Switch for NFC Application
|
Renesas Electronics Corporation
|
| WL-3A108 WL-1A105 WL-1A200 WL-1A300 WL-1A106 WL-1A |
Wide Range of Two-circuit Switches; Select One for the Operating Environment/Application
|
Omron Electronics LLC
|
| CWDSP1670 |
An OakDSPCore-based、Application-Specific Integrated Circuit (ASIC)(基于OakDSP内核芯片的特殊用途集成电
|
LSI Corporation
|
