PART |
Description |
Maker |
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
IXGT60N60 IXGH60N60 IXGK60N60 |
Ultra-Low VCE(sat) IGBT IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
http:// IXYS[IXYS Corporation]
|
IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXGM20N60A IXGM20N60 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
IXGH20N60 IXGH20N60A |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS Corporation
|
IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD Low V High speed IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IGW25T120 |
Low Loss IGBT in Trench and Fieldstop technology IGBTs & DuoPacks - 25A 1200V TO247 IGBT
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
IXGH17N100AU1 IXGH17N100U1 |
Low VCE(sat) IGBT with Diode High speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
AUIRGDC0250 |
Low VCE (on) Planar IGBT Technology
|
Infineon Technologies A...
|
Q67040-S4521 IGW60T120 |
IGBTs & DuoPacks - 60A 1200V TO247 IGBT Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
|
INFINEON[Infineon Technologies AG]
|
IXGH25N120A IXGH25N120 |
Low VCE(sat) High speed IGBT
|
IXYS[IXYS Corporation] ETC
|