| PART |
Description |
Maker |
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| NTLUD3191PZTAG NTLUD3191PZTBG NTLUD3191PZ |
Dual P-Channel 20 V MOSFET 1100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Power MOSFET −20 V, −1.8 A, Cool Dual P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
|
ON Semiconductor
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| FDML7610S |
30V Asymmetric Dual N-Channel MOSFET PowerTrenchPower Stage
Dual N-Channel PowerTrench? MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ
|
Fairchild Semiconductor
|
| USB10H |
Dual P-Channel 2.5V Specified PowerTrench MOSFET
Dual P-Channel 2.5V Specified PowerTrench MOSFET(双P沟道 PowerTrench MOS场效应管（漏电流-1.9A, 漏源电压-20V，导通电.17Ω 1900 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Vishay Intertechnology, Inc.
|
| FDS8960C0511 FDS8960C |
35V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench㈢ MOSFET
Dual N & P-Channel PowerTrench? MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDW2515N FDW2515NZ |
CAP CER 68000PF 100V 10% X7R1210 5.8 A, 20 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
Dual N-Channel 2.5V Specified PowerTrench MOSFET
|
Glenair, Inc.
FAIRCHILD[Fairchild Semiconductor]
|
| FDS8858CZ |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
|
Fairchild Semiconductor
|
| IRF5850 IRF5850TR |
2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
Ultra Low On-Resistance
|
International Rectifier
|
| ZXMD63N02 ZXMD63N02X ZXMD63N02XTC ZXMD63N02XTA |
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET 2400 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-187AA
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
| NTTD1P02R2 NTTD1P02 |
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package(-1.45 A, -20 V，双P通道，增强模式，Micro8封装的功率MOSFET) 1450 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
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