PART |
Description |
Maker |
KST9012 |
PNP Transistor Excellent hFE liearity Collector Current :IC=-0.5A
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SB804 |
World standard miniature package:SOT-89 Excellent DC current gain linearity.
|
TY Semiconductor Co., Ltd
|
2SD2150 |
Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.
|
TY Semiconductor Co., Ltd
|
AP30T03GH-HF AP30T03GH-HF-14 |
Lower Gate Charge Lower Gate Charge 17 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Simple Drive Requirement
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
WNM2027 WNM2027-3TR |
N-Channel, 20V, 3.6A, Power MOSFET Excellent ON resistance for higher DC current N-Channel MOSFET
|
TY Semiconductor Co., L...
|
CS8129YT5G CS8129YTVA5G CS8129 CS8129YDW16 CS8129Y |
5.0 V, 750 mA Low Dropout Linear Regulator with Lower RESET Threshold 5.0 V, 750 mA Low Dropout Linear Regulator with Lower RESET Threshold(5.0 V, 750 mA带较低复位(RESET)门限的低压差线性稳压器) 5V, 750mA Low Dropout Linear Regulator with Lower RESETbar Threshold; Package: SO-16 WB; No of Pins: 16; Container: Tape and Reel; Qty per Container: 1000 5 V FIXED POSITIVE LDO REGULATOR, 0.6 V DROPOUT, PDSO16
|
ONSEMI[ON Semiconductor]
|
TC1173 TC1173VUA TC1173VOA TC1173-5.0VOA TC1173-5. |
The TC1173 is a precision output (typically ±0.5%) CMOS low dropout regulator. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators!). TC1173 key features include ultra low noise operati The TC1173 is a precision output (typically ±0.5%) CMOS low dropout regulator. Total supply current is typically 50µA at ... 300mA CMOS LDO with Shutdown ERROR output and Bypass
|
MICROCHIP[Microchip Technology]
|
LPS3015-182MLB LPS3015-182MLD LPS3015-183MLB LPS30 |
Shielded Power Inductors LPS3015 Very low DCR; excellent current handling, Miniature 3.0 × 3.0 mm footprint; less than 1.5 mm tall Shielded Power Inductors LPS3015
|
Coilcraft lnc.
|
CER0017A |
Excellent Rejection
|
CTS Corporation
|
IPD040N03LG IPS040N03LG |
OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) OptiMOS庐3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|