| PART |
Description |
Maker |
| ET-T1646 6B10 |
DUPLEX-DIODE TWIN TRIODE
|
General Electric Company
|
| 6AV6 |
MINIATURE DOUBLE DIODE TRIODE
|
List of Unclassifed Manufacturers
|
| 12AU6 12AU7 |
HIGH SLOPE R.F. PENTODE, MINIAURE DOUBLE TRIODE
DOUBLE TRIODE 12-6V INDIRECTLY HEATED
|
List of Unclassifed Manufacturers
ETC
Brimar
|
| SC251 SC251N SC250 SC250B SC250B3 SC250D SC250D3 S |
Triac. Bidirectional triode thyristor. 15A RMS. Repetitive peak off-state voltage 800 V.
Triac. Bidirectional triode thyristor. 15A RMS. Repetitive peak off-state voltage 600 V.
Triac. Bidirectional triode thyristor. 15A RMS. Repetitive peak off-state voltage 400 V.
Triac. Bidirectional triode thyristor. 15A RMS. Repetitive peak off-state voltage 200 V.
TRIACS BIDIRECTIPNAL TRIODE THYRISTORS
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
| 3CW20000H7 |
The 3CW20,000H7 is a high-mu power triode
The 3CW20,000H7 is a high-mu power triode
|
Communications & Power Industries, Inc.
|
| 3CW30000H7 |
The 3CW30,000H7 is a high-mu power triode
The 3CW30,000H7 is a high-mu power triode
|
Communications & Power Industries, Inc.
|
| ISL58303 |
800mA Triple Output Laser Diode Driver
|
Renesas Electronics Corporation
|
| ISL58315 |
High Speed Triple Laser Diode Drivers
|
Intersil Corporation
|
| BAT754L BAT754L_1 |
From old datasheet system
Schottky barrier triple diode
|
PHILIPS[Philips Semiconductors]
|
