| PART |
Description |
Maker |
| 2SD1857A 2SD1918 2SD2211 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Power Transistor (160V 1.5A)
Power Transistor (160V , 1.5A)
|
ROHM[Rohm]
|
| 2SD2211 2SD1918 2SD1857A |
Power Transistor (160V , 1.5A)
|
ROHM[Rohm]
|
| 2SB1275 2SB1275-13 |
PNP -1.5A -160V Middle Power Transistor
|
Rohm
|
| 2SA1942O 2SA1942 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 12A I(C) | TO-264AA
|
TOSHIBA
|
| CSB649AB |
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
| 2SA1225 2SA1225Y |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251AA
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications
|
TOSHIBA
|
| 2SA1075 2SA1076 |
160V PNP silicon general purpose high speed power transistor
SILICON HIGH SPEED POWER TRANSISTOR
|
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Microelectronics
|
| 2SA1418 2SC3648 2SC3648T 2SA1418T 2SC3648S |
High-Voltage Switching/ Predriver Applications
High-Voltage Switching Predriver Applications
High-Voltage Switching, Predriver Applications
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 700MA I(C) | SOT-89
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 700MA I(C) | SOT-89
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 160V五（巴西）总裁| 700mA的一（c）|采用SOT - 89
|
SANYO[Sanyo Semicon Device]
|
| 2SA1215 |
POWER TRANSISTORS(15A,160V,150W)
|
MOSPEC[Mospec Semiconductor]
|
| TIP35D TIP35E TIP35F TIP36D TIP36E TIP36F |
POWER TRANSISTORS(25A,120-160V,125W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| EN2007C EN2007 |
Bipolar Transistor, (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single PCP
High-Voltage Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
