| PART |
Description |
Maker |
| QL78D6S-A QL78D6S-C QL78D6S-B QL78D6S-ABC |
AlGaAs Laser Diode
lasing wavelength
|
Roithner LaserTechnik GmbH
Roithner LaserTechnik G...
|
| SLD231VL |
Index-Guided High Power AlGaAs Laser Diode
|
SONY[Sony Corporation]
|
| RLD78NZH2 |
AlGaAs laser diodes
|
ROHM[Rohm]
|
| RLD-78PIT RLD-78MIT RLD-78NIT |
AlGaAs Laser Diodes(铝砷化镓激光二极管)
|
Rohm CO.,LTD.
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
