PART |
Description |
Maker |
RJK03N6DPA |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
30LJQ045 |
30V 45A Hi-Rel Schottky Discrete Diode in a SMD-0.5 package SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
RJK0653DPB RJK0653DPB-00-J5 RJK0653DPB-13 |
60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0452DPB13 RJK0452DPB-00-J5 |
40V, 45A, 3.5m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
IRFR3709ZPBF IRFU3709ZPBF IRFR3709ZTRR IRFR3709ZTR |
30 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mヘ , Qg = 17nC ) HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mΩ , Qg = 17nC ) High Frequency Synchronous Buck Converters for Computer Processor Power
|
International Rectifier
|
XC9250B083QR-G XC9251 |
30V Driver Transistor Built-In Step-Down DC/DC Converters
|
Torex Semiconductor
|
FMC7G50US60 |
IGBT Compact & Complex Module Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
FMC7G30US60 |
IGBT Compact & Complex Module Arbitrary/Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
DTB713ZM DTB713ZE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
http:// ROHM[Rohm]
|
DTD743XE11 DTD743XM |
200mA / 30V Low VCE (sat) Digital transistors(with built-in resistors)
|
Rohm
|
DTB743ZM DTB743ZE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|