| PART |
Description |
Maker |
| HYB18T1G160AC-3.7 HYB18T1G160AC-5 HYB18T1G400AC-3. |
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 400 (3-3-3); Available 3Q04
|
Infineon
|
| HYS64T64000GU-3.7-A HYS64T64000GU-5-A HYS64T128020 |
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx64) PC2 4300 4-4-4 2Bank; available 2Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx72) PC2 4300 4-4-4; 2Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx72) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx64) PC2 3200 3-3-3 2Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx72) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx72) PC2 3200 3-3-3 2Bank; available 2Q/04
|
Infineon
|
| EBE10RD4ABFA |
1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) 1GB的注册DDR2 SDRAM DIMM内存28M的字× 72位，1个等级）
|
Elpida Memory, Inc.
|
| H5PS1G83NFR |
1Gb DDR2 SDRAM
|
Hynix Semiconductor
|
| HY5PS1G431CFP HY5PS1G431CFP-C4 HY5PS1G431CFP-E3 HY |
1Gb DDR2 SDRAM
|
HYNIX[Hynix Semiconductor]
|
| K4T1G164QE K4T1G044QE K4T1G084QE |
1Gb E-die DDR2 SDRAM
|
Samsung Electronics
|
| IS43DR81280 |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| EBE10UE8AFSA EBE10UE8AFSA-6E-F EBE10UE8AFSA-8G-F |
1GB DDR2 SDRAM SO-DIMM
|
Elpida Memory
|
| EBE10EE8ACWA |
1GB Unbuffered DDR2 SDRAM DIMM
|
Elpida Memory
|
| EBE10UE8AEWA EBE10UE8AEWA-6E-E EBE10UE8AEWA-8G-E |
1GB Unbuffered DDR2 SDRAM DIMM
|
Elpida Memory
|
