PART |
Description |
Maker |
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
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NEC
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2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORAT |
Silicon N-Channel Power F-MOS FET 5000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
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APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp. Advanced Power Technology
|
UPA1763 PA1763 UPA1763G |
SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
|
NEC[NEC]
|
APT5010JVR |
POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
Advanced Power Technolo... Advanced Power Technology, Ltd.
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APT1001R1AVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs POWER MOS V 1000V 9A 1.100 Ohm
|
Advanced Power Technolo... ADPOW[Advanced Power Technology]
|
APT5010LVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
|
Advanced Power Technology Ltd. Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
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BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
APT5010JLC |
POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
RJK1002DPN-E0-T2 |
N-Channel MOS FET 100 V, 70 A, 7.6 m
|
Renesas Electronics Corporation
|
RJK0701DPP-E0 RJK0701DPP-E0-15 RJK0701DPP-E0-T2 |
N-Channel MOS FET 75 V, 100 A, 3.8 m N-Channel MOS FET 75 V, 100 A, 3.8 m?
|
Renesas Electronics Corporation
|
BF964 BF964S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken Vishay Siliconix
|