| PART |
Description |
Maker |
| AO3414 KO3414 |
VDS (V) = 20V ID= 4.2A (VGS=4.5V) RDS(ON) 50m (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V)
|
TY Semiconductor Co., Ltd
|
| KO3402 AO3402 |
VDS (V) = 30V ID= 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V)
|
TY Semiconductor Co., Ltd
|
| MA4EX950M-1225T |
HMICTM硅双平衡混频器，700 - 1200兆赫
Silicon Double Balanced HMICTM Mixer, 700 - 1200 MHz
|
MACOM[Tyco Electronics]
|
| BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL
Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| HMC399MS8E |
HIGH IP3 GaAs MMIC MIXER, 700 - 1000 MHz
700 MHz - 1000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 10 dB CONVERSION LOSS-MAX
|
Hittite Microwave Corporation
|
| OSC-13SH OSC-1.3SH |
NPN Silicon RF Power Transistor(Ic: 700 mA,Vce: 30 V)(NPN 纭??灏??????朵?绠?Ic: 700 mA,Vce: 30 V))
NPN Silicon RF Power Transistor(Ic: 700 mA,Vce: 30 V)(NPN 硅型射频功率晶体Ic: 700 mA,Vce: 30 V))
|
ADVANCED SEMICONDUCTOR INC
Advanced Semiconductor, Inc.
|
| SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
| SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| FDS89161LZ |
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
|
Fairchild Semiconductor
|
| FDN327N FDN327NNL |
N-Channel 1.8 Vgs Specified PowerTrench MOSFET
|
Fairchild Semiconductor
|
|
