PART |
Description |
Maker |
BC856BS |
65 V, 100 mA PNP/PNP general-purpose transistor 65 V, 100 mA PNP-PNP general-purpose transistor 100 mA, 65 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
PBLS6024D |
60 V, 1.5 A PNP BISS loadswitch 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
PBLS4002V115 |
40 V PNP BISS loadswitch, SOT666 (SS-Mini), Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
SLA4390 |
PNP NPN Darlington Transistor (H-Hridge)(PNP NPN达林顿晶体管H桥)) 5 A, 100 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
|
Sanken Electric Co., Ltd.
|
NSBA123JF3T5G NSBA123TF3T5G NSBA143EF3T5G NSBA143Z |
BRT, PNP, 50 V, 100 mA, 100 k, none, SOT-1123 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR Digital Transistors (BRT)
|
ON Semiconductor
|
XP03312 |
Silicon NPN(PNP) epitaxial planer transistor 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp. Panasonic Semiconductor
|
PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP Semiconductors
|
NSTB1005DXV504 NSTB1005DXV5T1 NSTB1005DXV5T5 |
Dual Common Base-Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
PEMB24 PEMB2409 PEMB24-PUMB24-15 |
PNP/PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW PNP/PNP resistor-equipped transistors R1 = 100 kW, R2 = 100 kW PNP-PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
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NXP Semiconductors
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